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IXKN 45N80C
CoolMOS ? 1) Power MOSFET
N-Channel Enhancement Mode
Low R DSon , High V DSS MOSFET
V DSS = 800 V
I D25 = 44 A
R DS(on) max = 74 m Ω
G
S
D
S
miniBLOC, SOT-227 B
G
E72873
G = Gate
S
S = Source
D = Drain
D
S
Either source terminal at miniBLOC can be used
as main or Kelvin Source
MOSFET
Features
Symbol
V DSS
V GS
Conditions
T VJ = 25°C
Maximum Ratings
800 V
± 20 V
? miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the
heatsink for reduced EMI
- International standard package SOT-227
I D25
I D90
d V /dt
E AS
E AR
T C = 25°C
T C = 90°C
V DS < V DSS ; I F =  7 A; | di F /dt | <  00 Aμs
I D = 4 A; L = 80 mH; T C = 25°C
I D =  7 A; L = 3 mH; T C = 25°C
44
30
6
670
0.5
A
A
V/ns
mJ
mJ
- Easy screw assembly
? CoolMOS ?  ) power MOSFET
3 rd generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
due to reduced chip thickness
? fast CoolMOS ?  ) power MOSFET
3 rd generation
- High blocking capability
- Low on resistance
R DSon
V GS(th)
I DSS
I GSS
V GS =  0 V; I D = I 25
V GS = V DS ; I D = 4 mA
V DS = V DSS ; V GS = 0 V; T VJ = 25°C
T VJ =  25°C
V GS = ± 20 V; V DS = 0 V
2. 
63
200
74
3.9
50
400
m W
V
μA
μA
nA
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
? Enhanced total power density
Applications
? Switched mode power supplies (SMPS)
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
V GS =  0 V; V DS = 640 V; I D = 70 A
V GS =  0 V; V DS = 400 V
I D = 70 A; R G =  .2 ? ; T VJ =  25°C
360
48
 84
25
 5
75
 0
nC
nC
nC
ns
ns
ns
ns
?
?
?
?
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
R thJC
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
0.33
K/W
 )
CoolMOS ? is a trademark of
Infineon Technologies AG.
20080526a
 -4
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